hsc106d/m semihow rev.a2 jun 2007 ? repetitive peak off-state voltage (v rm = 400v/600v) ? r.m.s on-state current (i t(rms) =4.0a) ? average on-state current (i t(av) =2.55a) ? sensitive gate triggering (0.2ma max @25 ) features hsc106d/m sensitive gate silicon controlled rectifier glassivated pnpn devices designed for high volume consumer applications such as temperature, light and speed control ; process and remote control, and warning systems where reliability of operation is important. general description v drm = 400v / 600v i t(rms) = 4.0a 1.cathode symbol 2.anode 3.gate v 400 600 repetitive peak off-state vo ltage (reverse) hsc106d hsc106m v rrm -40 to +110 operating junction temperature t j -40 to +150 storage temperature range t stg a 0.2 forward peak gate current (pulse width 1.0 sec, tc=80 ) i fgm v 6.0 reverse peak gate voltage v grm w 0.1 forward average gate power dissipation (pulse width 1.0 sec, tc=80 ) p g(av) w 0.5 forward peak gate power dissipation (pulse width 1.0 sec,tc=80 ) p gm a 2 s 1.65 circuit fusing considerations (t=8.3ms) i 2 t a 20 surge on-state current (1/2 cycle, 60hz, sine wa ve, non-repetitive, tj = 110 c) i tsm a 2.55 on-state average current (180 ? condition angles, t c =80 ) i t(av) a 4.0 on-state r.m.s current (180 ? condition angles, t c =80 ) i t(rms) v 400 600 repetitive peak off-state vo ltage (forward) hsc106d hsc106m v drm units value parameter symbol absolute maximum ratings ( t j =25) hsc106d/m 1 2 3 1. k 2. a 3. g to-126
hsc106d/m semihow rev.a2 jun 2007 v 2.2 i fm =1a peak forward on-state voltage (2) v tm ma 5.0 0.2 0.35 v ak = 12vdc, i g = 20ma, gate open, t j = 25 t j = 110 latching current i l (2) pulse test : pulse width 2.0ms, duty cycle 2% (1) r gk current is not included in measurement v/us 8.0 v ak = v drm , exponential waveform, r gk = 1 ? , gate open, t j =110 critical rate of rise off state voltage dv/dt ua ua 10 100 v ak = v drm or v rrm , t c = 25 t c = 110 repetitive or reverse peak blocking current i drm i rrm ma 3.0 6.0 2.0 0.19 0.33 0.07 v ak = 12vdc, gate open, initiating current=20ma, t j = 25 t j = -40 t j = 110 holding current i h v 0.2 v ak = 12vdc, r l = 100 ? , t c = 110 non trigger gate voltage v gd v 0.8 1.0 0.6 0.75 0.4 0.5 v ak = 6vdc, r l = 100 ? , t j = 25 v ak = 6vdc, r l = 100 ? , t j = -40 gate trigger voltage (1) v gt ua 200 500 15 35 v ak = 6vdc, r l = 100 ? , t j = 25 v ak = 6vdc, r l = 100 ? , t j = -40 gate trigger current (1) i gt units max typ min test conditions parameter symbol electrical characteristics ( t a =25 ) /w 3.0 junction to case thermal resistance r th(j-c) 260 maximum lead temperature for soldering purpose 1/8 ? , from case for 10second tl /w 75 junction to ambient thermal resistance r th(j-a) units max typ min conditions parameter symbol thermal characteristics
hsc106d/m semihow rev.a2 jun 2007 fig 5. typical gate trigger voltage vs junction temperature fig 1. average current derating 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 i t(av) average on-state current (a) t c , case temperature ( ) 110 100 90 80 70 60 50 40 30 20 10 fig 2. maximum on-state power dissipation 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 i t(av) average on-state current (a) p (av) , average on-state power dissipation (watt) 10 8 6 4 2 0 fig 3. typical gate trigger current vs junction temperature -40 -25 -10 5 20 35 50 65 80 95 110 t j junction temperature ( ) i gt , gate trigger current ( a) 100 10 1 fig 4. typical holding current vs junction temperature i h , holding current ( a) -40 -25 -10 5 20 35 50 65 80 95 110 100 10 1 t j junction temperature ( ) -40 -25 -10 5 20 35 50 65 80 95 110 v gt , gate trigger voltage (v) 1.0 0.6 0.2 0.3 0.4 0.5 0.7 0.8 0.9 t j junction temperature ( ) fig 6. typical latching current vs junction temperature i l , latching current ( a) -40 -25 -10 5 20 35 50 65 80 95 110 1000 100 10 t j junction temperature ( ) performance curves half sine wave resistive or inductive load 50 to 400hz half sine wave resistive or inductive load 50 to 400hz dc dc junction temperature = 110
hsc106d/m semihow rev.a2 jun 2007 12max 13max 1.2 0.2 0.78 0.08 8.5max 3.8 0.2 2.5 0.2 3.2 0 . 2 1.27typ 2.3max 2.3max 2.8max 0.5 0.1 package dimension hsc106d/m hsc106d/m (to (to - - 126) 126)
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